Author: Nam, K.M.
Paper Title Page
THP044 The Simulation Study for Single and Multi Turn ERL Based EUV FEL 677
  • K.M. Nam, G.S. Yun
    POSTECH, Pohang, Kyungbuk, Republic of Korea
  • Y.W. Parc
    PAL, Pohang, Kyungbuk, Republic of Korea
  Photolithography technology is the core part of the semiconductor manufacturing process. It has required light having stronger power for higher throughput. ERL based EUV FEL is emerging as a next generation EUV source which can produce the light over 10 kW. In this study, first, EUV-FEL design, which is based on single turn, is represented. It accelerates 40 pC electron beam to 600 MeV and produces EUV, whose wavelength and power are 13.5 nm and 37 kW. Second, multiturn based design is represented. It improved compactness to make it more suitable for industrial use. As a result, the electron beam was able to obtain the kinetic energy and circulate, and the size was reduced to about half without reducing the power greatly. This study is expected to increase the practical industrialization potential of ERL-based photolithography.  
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About • paper received ※ 20 August 2019       paper accepted ※ 28 August 2019       issue date ※ 05 November 2019  
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