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RIS citation export for TUP033: Q-Switching of X-Ray Optical Cavities by Using Boron Doped Buried Layer Under a Surface of a Diamond Crystal

TY  - CONF
AU  - Krzywiński, J.
AU  - Feng, Y.
AU  - Halavanau, A.
AU  - Huang, Z.
AU  - Kiss, A.M.
AU  - MacArthur, J.P.
AU  - Marcus, G.
AU  - Sato, T.
AU  - Zhu, D.
ED  - Schaa, Volker R.W.
ED  - Decking, Winfried
ED  - Sinn, Harald
ED  - Geloni, Gianluca
ED  - Schreiber, Siegfried
ED  - Marx, Michaela
TI  - Q-Switching of X-Ray Optical Cavities by Using Boron Doped Buried Layer Under a Surface of a Diamond Crystal
J2  - Proc. of FEL2019, Hamburg, Germany, 26-30 August 2019
CY  - Hamburg, Germany
T2  - Free Electron Laser Conference
T3  - 39
LA  - english
AB  - Improvement of the longitudinal coherence of X-ray Free Electron Lasers has been the subject of many recent investigations. The XFEL oscillator (XFELO) and Regenerative Amplifier Free-Electron Laser (RAFEL) schemes offer a pathway to fully coherent, high brightness X-ray radiation. The XFELO and RAFEL consist of a high repetition rate electron beam, an undulator and an X-ray crystal cavity to provide optical feedback. The X-ray cavity will be based on diamond crystals in order to manage a high thermal load. We are investigating a ’Q switching’ mechanism that involves the use of a ’Bragg switch’ to dump the X-ray pulse energy built-up inside an X-ray cavity. In particular, one can use an optical laser to manipulate the diamond crystal lattice constant to control the crystal reflectivity and transmission. It has been shown that a 9 MeV focused boron beam can create a buried layer, approximately 5 microns below surface, with a boron concentration up to 10²¹ atoms/cm³. Here, we present simulations showing that absorbing laser pulses by a buried layer under the crystal surface would allow creating a transient temperature profile which would be well suited for the ’Q switching’ scheme.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 122
EP  - 125
KW  - laser
KW  - FEL
KW  - cavity
KW  - electron
KW  - free-electron-laser
DA  - 2019/11
PY  - 2019
SN  - 978-3-95450-210-3
DO  - doi:10.18429/JACoW-FEL2019-TUP033
UR  - http://jacow.org/fel2019/papers/tup033.pdf
ER  -